IPD65R660CFDAATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details IPD65R660CFDAATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4.5V @ 214.55µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPD65R660CFDAATMA1 nach Preis ab 1.15 EUR bis 3.41 EUR
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IPD65R660CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO252-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4.5V @ 214.55µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4093 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD65R660CFDAATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 6A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4093 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.15 EUR |