IPD65R950CFDATMA2 Infineon Technologies

Description: MOSFET N-CH 650V 3.9A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 36.7W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.