IPD70R1K4CEAUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.47 EUR |
| 7500+ | 0.45 EUR |
| 12500+ | 0.43 EUR |
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Technische Details IPD70R1K4CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO252-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V.
Weitere Produktangebote IPD70R1K4CEAUMA1 nach Preis ab 0.35 EUR bis 1.95 EUR
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IPD70R1K4CEAUMA1 | Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD70R1K4CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 5.4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
auf Bestellung 14900 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD70R1K4CEAUMA1 |
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Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 1366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.64 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 2500+ | 0.41 EUR |
| 5000+ | 0.35 EUR |
| IPD70R1K4CEAUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |