Produkte > INFINEON TECHNOLOGIES > IPD80R280P7ATMA1

IPD80R280P7ATMA1 Infineon Technologies


Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.65 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPD80R280P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 800V 17A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V, Power Dissipation (Max): 101W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 360µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V.

Weitere Produktangebote IPD80R280P7ATMA1 nach Preis ab 1.88 EUR bis 5.68 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon_IPD80R280P7_DataSheet_v02_02_EN-3362382.pdf MOSFETs LOW POWER_NEW
auf Bestellung 5622 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.96 EUR
10+3.47 EUR
100+2.57 EUR
500+2.24 EUR
1000+2.11 EUR
2500+1.94 EUR
10000+1.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 6047 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.68 EUR
10+3.7 EUR
100+2.58 EUR
500+2.1 EUR
1000+2.02 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R280P7ATMA1 Infineon_IPD80R280P7_DataSheet_v02_02_EN-3362382.pdf
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 5622 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.96 EUR
10+3.47 EUR
100+2.57 EUR
500+2.24 EUR
1000+2.11 EUR
2500+1.94 EUR
10000+1.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 6047 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.68 EUR
10+3.7 EUR
100+2.58 EUR
500+2.1 EUR
1000+2.02 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH