IPD85P04P407ATMA1 Infineon Technologies

Description: MOSFET P-CH 40V 85A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3-313, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 88W (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.