IPD90N04S3-04 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.76 EUR |
| 10+ | 5.46 EUR |
| 100+ | 3.88 EUR |
| 500+ | 3.22 EUR |
| 1000+ | 3 EUR |
| 2500+ | 1.87 EUR |
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Technische Details IPD90N04S3-04 Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET, Vgs(th) (Max) @ Id: 4V @ 90µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-11.
Weitere Produktangebote IPD90N04S3-04
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPD90N04S3-04 | Infineon Technologies |
 Description: OPTLMOS N-CHANNEL POWER MOSFETVgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-11 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IPD90N04S304ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ T Polarisation: unipolar Gate charge: 60nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD90N04S3-04 |
|
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Description: OPTLMOS N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-11
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD90N04S304ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 60nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH