IPD90N04S4-04 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.98 EUR |
| 10+ | 1.4 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.8 EUR |
| 25000+ | 0.76 EUR |
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Technische Details IPD90N04S4-04 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A, Type of transistor: N-MOSFET, Technology: OptiMOS™ T2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 81A, Power dissipation: 71W, Case: PG-TO252-3-313, Gate-source voltage: ±20V, On-state resistance: 4.1mΩ, Mounting: SMD, Gate charge: 20nC, Kind of channel: enhancement, Pulsed drain current: 360A, Kind of package: reel.
Weitere Produktangebote IPD90N04S4-04
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 81A Power dissipation: 71W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhancement Pulsed drain current: 360A Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPD90N04S404ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Pulsed drain current: 360A
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Pulsed drain current: 360A
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH