IPD90P03P4L04ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET P-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.62 EUR |
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Technische Details IPD90P03P4L04ATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V, Power Dissipation (Max): 137W (Tc), Vgs(th) (Max) @ Id: 2V @ 253µA, Supplier Device Package: PG-TO252-3-11, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.
Weitere Produktangebote IPD90P03P4L04ATMA1 nach Preis ab 1.7 EUR bis 6.94 EUR
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IPD90P03P4L04ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2V @ 253µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
auf Bestellung 6243 Stücke: Lieferzeit 10-14 Tag (e) |
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P-канальний ПТ; Udss, В = 30; Id = 90 А; Ptot, Вт = 137; Тип монт. = smd; Ciss, пФ @ Uds, В = 11300 @ 25; Qg, нКл = 160 @ 10; Rds = 4,1 мОм @ 90 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 2 В @ 253 мкА; DPAK-3 |
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