IPDD60R037CM8XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IPDD60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.93 EUR |
| 10+ | 8.01 EUR |
| 100+ | 6.48 EUR |
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Technische Details IPDD60R037CM8XTMA1 Infineon Technologies
Description: IPDD60R037CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tj), Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 680µA, Supplier Device Package: PG-HDSOP-10-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V.
Weitere Produktangebote IPDD60R037CM8XTMA1 nach Preis ab 5.44 EUR bis 10.51 EUR
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IPDD60R037CM8XTMA1 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDD60R037CM8XTMA1 | Hersteller : Infineon Technologies |
SP005578052 |
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IPDD60R037CM8XTMA1 | Hersteller : Infineon Technologies |
Description: IPDD60R037CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tj) Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 680µA Supplier Device Package: PG-HDSOP-10-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V |
Produkt ist nicht verfügbar |