IPDD60R045CFD7XTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 72+ | 7.66 EUR |
| 100+ | 7.17 EUR |
| 500+ | 6.64 EUR |
| 1000+ | 6.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPDD60R045CFD7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 61A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V, Power Dissipation (Max): 379W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V.
Weitere Produktangebote IPDD60R045CFD7XTMA1 nach Preis ab 6 EUR bis 12.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPDD60R045CFD7XTMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 61A HDSOP-10Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Vgs(th) (Max) @ Id: 4.5V @ 900µA Power Dissipation (Max): 379W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V |
auf Bestellung 1680 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPDD60R045CFD7XTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 61A HDSOP-10
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 379W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Description: MOSFET N-CH 600V 61A HDSOP-10
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 379W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.78 EUR |
| 10+ | 9.27 EUR |
| 100+ | 6.84 EUR |
| 500+ | 6 EUR |