| Anzahl | Preis |
|---|---|
| 1+ | 7.06 EUR |
| 10+ | 5.33 EUR |
| 25+ | 4.75 EUR |
| 100+ | 4.03 EUR |
| 250+ | 3.8 EUR |
| 500+ | 3.43 EUR |
| 1000+ | 3.22 EUR |
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Technische Details IPDD60R105CFD7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10, Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: PG-HDSOP-10-1, Vgs(th) (Max) @ Id: 4.5V @ 390µA, Power Dissipation (Max): 198W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPDD60R105CFD7XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPDD60R105CFD7XTMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 31A HDSOP-10Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IPDD60R105CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A HDSOP-10 Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 198W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPDD60R105CFD7XTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 31A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPDD60R105CFD7XTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Power Dissipation (Max): 198W (Tc)
Description: MOSFET N-CH 600V 31A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Power Dissipation (Max): 198W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH