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IPDQ60R040S7XTMA1

IPDQ60R040S7XTMA1 Infineon Technologies


Infineon-IPDQ60R040S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06c46227157c Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 750 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+7.17 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPDQ60R040S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 790µA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V.

Weitere Produktangebote IPDQ60R040S7XTMA1 nach Preis ab 6.18 EUR bis 12.06 EUR

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IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Hersteller : Infineon Technologies Infineon_IPDQ60R040S7_DataSheet_v02_00_EN-3007134.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.70 EUR
10+7.76 EUR
25+7.23 EUR
100+6.67 EUR
250+6.64 EUR
2250+6.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ60R040S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06c46227157c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.06 EUR
10+9.30 EUR
25+8.61 EUR
100+7.86 EUR
250+7.50 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Hersteller : Infineon Technologies infineon-ipdq60r040s7-datasheet-v02_00-en.pdf Trans MOSFET N-CH 600V 14A 22-Pin HDSOP EP T/R
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