auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.6 EUR |
| 10+ | 9.75 EUR |
| 25+ | 9.03 EUR |
| 100+ | 8.24 EUR |
| 250+ | 7.87 EUR |
| 750+ | 7.36 EUR |
| 2250+ | 7.27 EUR |
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Technische Details IPDQ65R040CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.24mA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V.
Weitere Produktangebote IPDQ65R040CFD7XTMA1 nach Preis ab 8.48 EUR bis 13.53 EUR
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IPDQ65R040CFD7XTMA1 | Hersteller : Infineon Technologies |
 Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R040CFD7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 64A 22-Pin HDSOP EP T/R |
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IPDQ65R040CFD7XTMA1 | Hersteller : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V |
Produkt ist nicht verfügbar |