IPDQ65R099CFD7AXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3+ | 6.32 EUR |
| 10+ | 4.78 EUR |
| 25+ | 4.4 EUR |
| 100+ | 3.98 EUR |
| 250+ | 3.78 EUR |
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Technische Details IPDQ65R099CFD7AXTMA1 Infineon Technologies
Description: AUTOMOTIVE_COOLMOS, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Power Dissipation (Max): 186W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPDQ65R099CFD7AXTMA1 nach Preis ab 3.76 EUR bis 3.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
| IPDQ65R099CFD7AXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 29A Power dissipation: 186W Gate-source voltage: 20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IPDQ65R099CFD7AXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 750+ | 3.76 EUR |

