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IPDQ65R099CFD7AXTMA1 Infineon Technologies


Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.32 EUR
10+4.78 EUR
25+4.4 EUR
100+3.98 EUR
250+3.78 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPDQ65R099CFD7AXTMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Power Dissipation (Max): 186W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPDQ65R099CFD7AXTMA1 nach Preis ab 3.76 EUR bis 3.76 EUR

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IPDQ65R099CFD7AXTMA1 INFINEON TECHNOLOGIES Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
750+3.76 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R099CFD7AXTMA1 Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
750+3.76 EUR
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH