auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.14 EUR |
| 10+ | 4.28 EUR |
| 100+ | 3.68 EUR |
| 500+ | 3.36 EUR |
| 750+ | 3.2 EUR |
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Technische Details IPDQ65R099CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V, Power Dissipation (Max): 186W (Tc).
Weitere Produktangebote IPDQ65R099CFD7XTMA1 nach Preis ab 3.69 EUR bis 6.18 EUR
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IPDQ65R099CFD7XTMA1 | Hersteller : Infineon Technologies |
 Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
auf Bestellung 739 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R099CFD7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 29A 22-Pin HDSOP EP T/R |
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IPDQ65R099CFD7XTMA1 | Hersteller : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Power Dissipation (Max): 186W (Tc) |
Produkt ist nicht verfügbar |