Technische Details IPF011N08NM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in DPAK 7-pin.
Weitere Produktangebote IPF011N08NM6ATMA1
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IPF011N08NM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 279µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
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IPF011N08NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 279µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
Produkt ist nicht verfügbar |
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IPF011N08NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in DPAK 7-pin |
Produkt ist nicht verfügbar |