IPF013N04NF2S Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7, Type of transistor: N-MOSFET, Technology: StrongIRFET™ 2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 239A, Pulsed drain current: 956A, Power dissipation: 231W, Case: D2PAK-7, Gate-source voltage: ±20V, On-state resistance: 1.35mΩ, Mounting: SMD, Gate charge: 106nC, Kind of package: reel; tape, Kind of channel: enhancement.