IPF023N08NF2SATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 139µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
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Technische Details IPF023N08NF2SATMA1 Infineon Technologies
Description: TRENCH 40.
Weitere Produktangebote IPF023N08NF2SATMA1 nach Preis ab 2.76 EUR bis 7.37 EUR
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IPF023N08NF2SATMA1 | Infineon Technologies |
MOSFETs N |
auf Bestellung 717 Stücke: Lieferzeit 10-14 Tag (e) |
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IPF023N08NF2SATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 139µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPF023N08NF2SATMA1 |
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Hersteller: Infineon Technologies
MOSFETs N
MOSFETs N
auf Bestellung 717 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.41 EUR |
| 10+ | 4.8 EUR |
| 25+ | 4.73 EUR |
| 100+ | 3.41 EUR |
| 800+ | 2.76 EUR |
| IPF023N08NF2SATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 139µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
Description: TRENCH 40<-<100V PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 139µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.37 EUR |
| 10+ | 4.87 EUR |
| 100+ | 3.45 EUR |