IPF031N13NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 207A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 15V, Power Dissipation (Max): 3.8W (Ta), 394W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: PG-TO263-7-3, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 135 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V.