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IPG16N10S461AATMA1

IPG16N10S461AATMA1 Infineon Technologies

IPG16N10S4-61A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7617a030a03 Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.81 EUR
Mindestbestellmenge: 5000
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Technische Details IPG16N10S461AATMA1 Infineon Technologies

Description: MOSFET 2N-CH 100V 16A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 29W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 16A, Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V, Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 9µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPG16N10S461AATMA1 nach Preis ab 0.81 EUR bis 2.06 EUR

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IPG16N10S461AATMA1 IPG16N10S461AATMA1 Hersteller : Infineon Technologies Infineon_IPG16N10S4_61A_DataSheet_v01_10_EN-3362694.pdf MOSFET MOSFET_(75V 120V(
auf Bestellung 4455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.02 EUR
10+ 1.67 EUR
100+ 1.3 EUR
500+ 1.11 EUR
1000+ 0.85 EUR
5000+ 0.81 EUR
Mindestbestellmenge: 2
IPG16N10S461AATMA1 IPG16N10S461AATMA1 Hersteller : Infineon Technologies IPG16N10S4-61A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7617a030a03 Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.69 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 9
IPG16N10S461AATMA1 Hersteller : Infineon IPG16N10S4-61A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7617a030a03
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG16N10S461AATMA1 IPG16N10S461AATMA1 Hersteller : Infineon Technologies 396ipg16n10s4-61a_ds_1_0.pdffolderiddb3a30431f848401011fcbf221ff04c3.pdf Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
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