IPG20N04S4-09 Infineon Technologies


Infineon-IPG20N04S4_09-DS-v01_00-en-1226268.pdf
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 10000 Stücke:
Lieferzeit 374-378 Tag (e)
AnzahlPrivatkunde
2+3.14 EUR
10+2.83 EUR
100+2.2 EUR
500+1.82 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPG20N04S4-09 Infineon Technologies

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 20A, Power dissipation: 54W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 8.6mΩ, Mounting: SMD, Gate charge: 21.7nC, Kind of channel: enhancement, Technology: OptiMOS™ T2.

Weitere Produktangebote IPG20N04S4-09

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IPG20N04S409ATMA1 IPG20N04S409ATMA1 INFINEON TECHNOLOGIES IPG20N04S409.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S409ATMA1 IPG20N04S409.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH