IPG20N04S4-09 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.14 EUR |
| 10+ | 2.83 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPG20N04S4-09 Infineon Technologies
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 20A, Power dissipation: 54W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 8.6mΩ, Mounting: SMD, Gate charge: 21.7nC, Kind of channel: enhancement, Technology: OptiMOS™ T2.
Weitere Produktangebote IPG20N04S4-09
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IPG20N04S409ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 54W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 21.7nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPG20N04S409ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



