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IPG20N04S408BATMA1

IPG20N04S408BATMA1 Infineon Technologies

Infineon-IPG20N04S4-08B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d3018480b443e52bfe
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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5+3.54 EUR
10+2.26 EUR
100+1.53 EUR
500+1.22 EUR
1000+1.12 EUR
2000+1.03 EUR
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Technische Details IPG20N04S408BATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 20A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-10, Vgs(th) (Max) @ Id: 4V @ 30µA, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 65W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote IPG20N04S408BATMA1

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IPG20N04S408BATMA1 IPG20N04S408BATMA1 Infineon Technologies Infineon-IPG20N04S4-08B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d3018480b443e52bfe Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S408BATMA1 Infineon Technologies Infineon_IPG20N04S4_08B_DataSheet_v01_00_EN-3107538.pdf MOSFETs MOSFET_(20V 40V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S408BATMA1 Infineon-IPG20N04S4-08B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d3018480b443e52bfe
IPG20N04S408BATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S408BATMA1 Infineon_IPG20N04S4_08B_DataSheet_v01_00_EN-3107538.pdf
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH