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IPG20N04S408BATMA1

IPG20N04S408BATMA1 Infineon Technologies

Infineon-IPG20N04S4-08B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d3018480b443e52bfe
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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Technische Details IPG20N04S408BATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 30µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPG20N04S408BATMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IPG20N04S408BATMA1 IPG20N04S408BATMA1 Infineon Technologies Infineon-IPG20N04S4-08B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d3018480b443e52bfe Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S408BATMA1 Infineon Technologies Infineon_IPG20N04S4_08B_DataSheet_v01_00_EN-3107538.pdf MOSFETs MOSFET_(20V 40V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPG20N04S408BATMA1 Infineon-IPG20N04S4-08B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d3018480b443e52bfe
IPG20N04S408BATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S408BATMA1 Infineon_IPG20N04S4_08B_DataSheet_v01_00_EN-3107538.pdf
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH