IPG20N04S418AATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 20A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-10, Vgs(th) (Max) @ Id: 4V @ 8µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).