IPG20N10S4L35AATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.19 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.94 EUR |
| 5000+ | 0.9 EUR |
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Technische Details IPG20N10S4L35AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 43W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 16µA, Supplier Device Package: PG-TDSON-8-10, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPG20N10S4L35AATMA1 nach Preis ab 0.95 EUR bis 3.29 EUR
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IPG20N10S4L35AATMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 100V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 16µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3030 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N10S4L35AATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.29 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.03 EUR |
| 2000+ | 0.95 EUR |