Technische Details IPI020N06NAKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO262, Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 2.8V @ 143µA, Power Dissipation (Max): 3W (Ta), 214W (Tc).
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPI020N06NAKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 60V 29A/120A TO262Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 2.8V @ 143µA Power Dissipation (Max): 3W (Ta), 214W (Tc) |
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IPI020N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPI020N06NAKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO262
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Description: MOSFET N-CH 60V 29A/120A TO262
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI020N06NAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH