IPI020N06NAKSA1 Infineon Technologies

Description: MOSFET N-CH 60V 29A/120A TO262, Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 2.8V @ 143µA, Power Dissipation (Max): 3W (Ta), 214W (Tc).