IPI037N08N3GXKSA1 Infineon Technologies

Description: MOSFET N-CH 80V 100A TO262-3, Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 155µA, Power Dissipation (Max): 214W (Tc).