Technische Details IPI076N12N3GAKSA1 Infineon Technologies
Description: MOSFET N-CH 120V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 130µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V.
Weitere Produktangebote IPI076N12N3GAKSA1 nach Preis ab 2.43 EUR bis 6.28 EUR
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IPI076N12N3GAKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI076N12N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3 Mounting: THT Power dissipation: 168W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO262-3 On-state resistance: 7.6mΩ |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI076N12N3GAKSA1 | Infineon Technologies |
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
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IPI076N12N3GAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI076N12N3GAKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 5.07 EUR |
| 38+ | 4.46 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.95 EUR |
| IPI076N12N3GAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Mounting: THT
Power dissipation: 168W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO262-3
On-state resistance: 7.6mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Mounting: THT
Power dissipation: 168W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO262-3
On-state resistance: 7.6mΩ
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.09 EUR |
| 50+ | 2.62 EUR |
| 100+ | 2.43 EUR |
| IPI076N12N3GAKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 5.56 EUR |
| 35+ | 4.78 EUR |
| 100+ | 3.76 EUR |
| 500+ | 3.06 EUR |
| IPI076N12N3GAKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V
Description: MOSFET N-CH 120V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.28 EUR |
| 10+ | 5.28 EUR |
| 100+ | 4.27 EUR |