IPI100N06S3L-03 Infineon Technologies

Description: MOSFET N-CH 55V 100A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO262-3, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 2.2V @ 230µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.