IPI120N04S4-02 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.5 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.31 EUR |
| 2500+ | 2.24 EUR |
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Technische Details IPI120N04S4-02 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 120A, Power dissipation: 158W, Case: PG-TO262-3, Gate-source voltage: ±20V, On-state resistance: 1.8mΩ, Mounting: THT, Gate charge: 103nC, Kind of channel: enhancement, Technology: OptiMOS™ T2.
Weitere Produktangebote IPI120N04S4-02
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPI120N04S402AKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 158W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 103nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPI120N04S402AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH