IPI50R140CPXKSA1 Infineon Technologies

Description: HIGH POWER_LEGACY, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 3.5V @ 930µA, Power Dissipation (Max): 192W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk.