IPI60R199CPXKSA2 Infineon Technologies

Description: HIGH POWER_LEGACY, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 3.5V @ 660µA, Power Dissipation (Max): 139W (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.