Weitere Produktangebote IPI65R190CFDXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPI65R190CFDXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 IPI65R190CFDXKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPI65R190CFDXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI65R190CFDXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 730µA Supplier Device Package: PG-TO262-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
Produkt ist nicht verfügbar |