IPI80N03S4L-03 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 2.2V @ 90µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V.