IPL60R075CFD7AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
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Technische Details IPL60R075CFD7AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V, Power Dissipation (Max): 189W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 760µA, Supplier Device Package: PG-VSON-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V.
Weitere Produktangebote IPL60R075CFD7AUMA1 nach Preis ab 3.5 EUR bis 9.91 EUR
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IPL60R075CFD7AUMA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 2814 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL60R075CFD7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 33A 4VSON Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V Power Dissipation (Max): 189W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V |
auf Bestellung 5402 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPL60R075CFD7AUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 2814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.11 EUR |
| 10+ | 5.03 EUR |
| 100+ | 4.22 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.78 EUR |
| 3000+ | 3.5 EUR |
| IPL60R075CFD7AUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 5402 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.91 EUR |
| 10+ | 6.65 EUR |
| 100+ | 4.8 EUR |
| 500+ | 4.01 EUR |