IPL60R105P7 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 21A, Power dissipation: 137W, Case: PG-VSON-4, Gate-source voltage: ±20V, On-state resistance: 0.105Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 45nC, Version: ESD, Kind of package: reel.