IPL60R125P7 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 25+ | 7.21 EUR |
| 26+ | 6.81 EUR |
| 50+ | 6.4 EUR |
| 100+ | 6.05 EUR |
| 250+ | 5.77 EUR |
| 500+ | 5.53 EUR |
| 1000+ | 5.27 EUR |
| 2500+ | 5.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPL60R125P7 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 17A, Power dissipation: 111W, Case: PG-VSON-4, Gate-source voltage: ±20V, On-state resistance: 0.125Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 36nC, Version: ESD, Kind of package: reel.
Weitere Produktangebote IPL60R125P7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Version: ESD Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPL60R125P7AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH