| Anzahl | Preis |
|---|---|
| 1+ | 4.31 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.32 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.85 EUR |
| 3000+ | 1.69 EUR |
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Technische Details IPL60R185C7AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-VSON-4, Vgs(th) (Max) @ Id: 4V @ 260µA, Power Dissipation (Max): 77W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPL60R185C7AUMA1 nach Preis ab 2.56 EUR bis 4.96 EUR
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IPL60R185C7AUMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 13A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 260µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
auf Bestellung 2922 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPL60R185C7AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.96 EUR |
| 10+ | 4.16 EUR |
| 100+ | 3.37 EUR |
| 500+ | 2.99 EUR |
| 1000+ | 2.56 EUR |