IPL60R1K5C6SATMA1 Infineon Technologies
auf Bestellung 14730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.74 EUR |
| 5000+ | 0.72 EUR |
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Technische Details IPL60R1K5C6SATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3A THIN-PAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V, Power Dissipation (Max): 26.6W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: 8-ThinPak (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V.
Weitere Produktangebote IPL60R1K5C6SATMA1
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IPL60R1K5C6SATMA1 | Hersteller : Infineon Technologies |
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| IPL60R1K5C6SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
IPL60R1K5C6SATMA1 SMD N channel transistors |
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IPL60R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 3A THIN-PAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 26.6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: 8-ThinPak (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
Produkt ist nicht verfügbar |