Technische Details IPL65R210CFDAUMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 16.6A, Power dissipation: 151W, Case: PG-VSON-4, Gate-source voltage: ±20V, On-state resistance: 0.21Ω, Mounting: SMD, Kind of channel: enhancement.
Weitere Produktangebote IPL65R210CFDAUMA1
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IPL65R210CFDAUMA1 | Hersteller : Infineon Technologies |
 MOSFET HIGH POWER BEST IN CLASS |
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IPL65R210CFDAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.6A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |