Technische Details IPL65R420E6AUMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10.1A, Power dissipation: 83W, Case: PG-VSON-4, Gate-source voltage: ±20V, On-state resistance: 0.42Ω, Mounting: SMD, Kind of channel: enhancement.
Weitere Produktangebote IPL65R420E6AUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPL65R420E6AUMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Power dissipation: 83W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.42Ω Mounting: SMD Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH |
| IPL65R420E6AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH