IPLK60R1K0PFD7ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 5.2A THIN-PAK, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-52, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 31.3W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).