IPLU250N04S41R7XTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.07 EUR |
| 10+ | 3.98 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.31 EUR |
| 2000+ | 2.15 EUR |
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Technische Details IPLU250N04S41R7XTMA1 Infineon Technologies
Description: MOSFET N-CH 40V 250A 8HSOF, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 4V @ 80µA, Power Dissipation (Max): 188W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPLU250N04S41R7XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPLU250N04S41R7XTMA1 | Infineon Technologies |
 Description: MOSFET N-CH 40V 250A 8HSOFQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 4V @ 80µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPLU250N04S41R7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 250A 8HSOF Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 4V @ 80µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPLU250N04S41R7XTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 250A 8HSOF
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 250A 8HSOF
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPLU250N04S41R7XTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 250A 8HSOF
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET N-CH 40V 250A 8HSOF
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH