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IPLU300N04S4R7XTMA2 Infineon Technologies



Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 230µA
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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Technische Details IPLU300N04S4R7XTMA2 Infineon Technologies

Description: MOSFET N-CH 40V 300A 8HSOF, Grade: Automotive, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 4V @ 230µA, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Power Dissipation (Max): 429W (Tc), Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).

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IPLU300N04S4R7XTMA2 IPLU300N04S4R7XTMA2 Infineon Technologies MOSFET
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IPLU300N04S4R7XTMA2
Hersteller: Infineon Technologies
MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH