Technische Details IPM018N10NM5LF2AUMA1 Infineon Technologies
Description: IPM018N10NM5LF2AUMA1, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Supplier Device Package: PG-HSOG-4-1, Vgs(th) (Max) @ Id: 3.45V @ 240µA, Power Dissipation (Max): 3.8W (Ta), 349W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc).
Weitere Produktangebote IPM018N10NM5LF2AUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPM018N10NM5LF2AUMA1 | Infineon Technologies |
 Description: IPM018N10NM5LF2AUMA1FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-HSOG-4-1 Vgs(th) (Max) @ Id: 3.45V @ 240µA Power Dissipation (Max): 3.8W (Ta), 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPM018N10NM5LF2AUMA1 | Infineon Technologies |
Description: IPM018N10NM5LF2AUMA1 Vgs(th) (Max) @ Id: 3.45V @ 240µA Power Dissipation (Max): 3.8W (Ta), 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-HSOG-4-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPM018N10NM5LF2AUMA1 | Infineon Technologies |
MOSFETs OptiMOS 5 single N-channel Linear FET 2 100 V, 176 A in 8 mm x 8 mm footprint |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPM018N10NM5LF2AUMA1 |
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Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPM018N10NM5LF2AUMA1 |
|
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPM018N10NM5LF2AUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs OptiMOS 5 single N-channel Linear FET 2 100 V, 176 A in 8 mm x 8 mm footprint
MOSFETs OptiMOS 5 single N-channel Linear FET 2 100 V, 176 A in 8 mm x 8 mm footprint
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH