IPN50R3K0CE Infineon Technologies

Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-SOT223, Vgs(th) (Max) @ Id: 3.5V @ 30µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-3, Packaging: Bulk.