| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.33 EUR |
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Technische Details IPN60R1K0PFD7SATMA1 Infineon Technologies
Description: CONSUMER PG-SOT223-3, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 6W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPN60R1K0PFD7SATMA1 nach Preis ab 0.45 EUR bis 1.57 EUR
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IPN60R1K0PFD7SATMA1 | Infineon Technologies |
 Description: CONSUMER PG-SOT223-3Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPN60R1K0PFD7SATMA1 |
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Hersteller: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: CONSUMER PG-SOT223-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 18+ | 0.98 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.45 EUR |