IPN60R600P7SATMA1 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223; ESD, Case: PG-SOT223, Mounting: SMD, Power dissipation: 7W, Gate charge: 9nC, Polarisation: unipolar, Version: ESD, Technology: CoolMOS™ P7, Drain current: 4A, Kind of channel: enhancement, Drain-source voltage: 600V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 0.6Ω.