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IPN80R600P7ATMA1 Infineon Technologies


infineon-ipn80r600p7-ds-en.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.91 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPN80R600P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 800V 8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 7.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V.

Weitere Produktangebote IPN80R600P7ATMA1 nach Preis ab 0.89 EUR bis 3.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPN80R600P7ATMA1 IPN80R600P7ATMA1 Infineon Technologies Infineon_IPN80R600P7_DS_v02_01_EN.pdf MOSFETs LOW POWER_NEW
auf Bestellung 1419 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.06 EUR
10+1.97 EUR
100+0.95 EUR
500+0.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R600P7ATMA1 IPN80R600P7ATMA1 Infineon Technologies infineon-ipn80r600p7-ds-en.pdf Description: MOSFET N-CH 800V 8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 3311 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+2.08 EUR
100+1.4 EUR
500+1.12 EUR
1000+1.02 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R600P7ATMA1 Infineon_IPN80R600P7_DS_v02_01_EN.pdf
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 1419 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.06 EUR
10+1.97 EUR
100+0.95 EUR
500+0.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R600P7ATMA1 infineon-ipn80r600p7-ds-en.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 3311 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.24 EUR
10+2.08 EUR
100+1.4 EUR
500+1.12 EUR
1000+1.02 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH