IPN95R1K2P7 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 950V, Drain current: 3.7A, Power dissipation: 7W, Case: PG-SOT223, Gate-source voltage: ±20V, On-state resistance: 1.2Ω, Mounting: SMD, Gate charge: 15nC, Kind of package: reel, Kind of channel: enhancement, Version: ESD.