IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 16+ | 4.58 EUR |
| 19+ | 3.89 EUR |
| 25+ | 2.97 EUR |
| 27+ | 2.69 EUR |
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Technische Details IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 198A, Power dissipation: 300W, Case: TO220-3, On-state resistance: 1.4mΩ, Mounting: THT, Gate charge: 203nC, Kind of channel: enhancement.
Weitere Produktangebote IPP014N06NF2SAKMA2 nach Preis ab 2.91 EUR bis 8.99 EUR
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IPP014N06NF2SAKMA2 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 246µA Supplier Device Package: PG-TO220-3-U05 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP014N06NF2SAKMA2 | Infineon Technologies |
MOSFETs IFX FET 60V |
auf Bestellung 1077 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP014N06NF2SAKMA2 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.5 EUR |
| 50+ | 3.87 EUR |
| 100+ | 3.52 EUR |
| 500+ | 2.91 EUR |
| IPP014N06NF2SAKMA2 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
MOSFETs IFX FET 60V
auf Bestellung 1077 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.99 EUR |
| 10+ | 5.9 EUR |
| 100+ | 4.38 EUR |
| 500+ | 3.68 EUR |
| 1000+ | 3.41 EUR |
| 2000+ | 3.19 EUR |